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This is the free Material Data Center Datasheet of LEXAN™ VISUALFX™ Resin FXE121 Europe - PC - Saudi Basic Industries Corporation (SABIC)

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제품 설명서
Transparent PC.  ILLUMINATE special effects (fluorescent/edge glow colors).  MFR 18.2.​
Processing/Physical Characteristics단위시험규격
ISO 데이터
용융 부피 - 흐름 속도, MVR 21 cm³/10min ISO 1133
온도 300 °C -
하중 1.2 kg -
기계적 특성단위시험규격
ISO 데이터
인장탄성률 2350 MPa ISO 527
항복강도 63 MPa ISO 527
항복변형률 6 % ISO 527
파단시 강도 65 MPa ISO 527
파단시 신율 100 % ISO 527
굴곡 계수, 23°C 2300 MPa ISO 178
챠피 충격 강도, +23°C N kJ/m² ISO 179/1eU
챠피 노치드 충격 강도, +23°C 65 kJ/m² ISO 179/1eA
챠피 노치드 충격 강도, -30°C 12 kJ/m² ISO 179/1eA
Izod충격강도, +23°C N kJ/m² ISO 180/1U
아이조드 충격은 노치, +23°C 65 kJ/m² ISO 180/1A
아이조드 충격은 노치 11 kJ/m² ISO 180/1A
온도 -30 °C -
Ball indentation hardness 95 MPa ISO 2039-1
열적 특성단위시험규격
ISO 데이터
하중하에서의 변형온도, 1.80 MPa 122 °C ISO 75-1/-2
하중하에서의 변형온도, 0.45 MPa 133 °C ISO 75-1/-2
비카트 연화 온도, B 140 °C ISO 306
선형 열팽창 계수, 평행 70 E-6/K ISO 11359-1/-2
두께 H인 제품의 난연성 HB class IEC 60695-11-10
테스트 두께 0.7 mm -
Yellow Card 유효한 - -
전기적 특성단위시험규격
ISO 데이터
CTI 325 - IEC 60112
기타 특성단위시험규격
물에서의 흡수성 0.35 % ISO 62와 유사
조건에서의 흡습성 0.15 % ISO 62와 유사
밀도 1200 kg/m³ ISO 1183
Processing Recommendation Injection Molding단위시험규격
Pre-drying - Temperature 120 °C -
Pre-drying - Time 2 - 4 h -
Processing humidity ≤0.02 % -
용융수지온도 280 - 300 °C -
성형온도 80 - 100 °C -
Feed temperature 60 - 80 °C -
Zone 1 260 - 280 °C -
Zone 2 270 - 290 °C -
Zone 3 280 - 300 °C -
Nozzle temperature 270 - 290 °C -
특징
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Disclaimer
Copyright Altair Engineering GmbH. Altair Engineering GmbH assumes no liability for the system to be free of errors. The user takes sole responsibility for the use of this data under the exclusion of every liability from Altair Engineering GmbH; this is especially valid for claims of compensation resulting from consequential damages. Altair explicitly points out that any decision about the application of materials must be double checked with the producer of this material. This includes all contents of this system. Copyright laws are applicable for the content of this system.
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